CMP (Chemical Mechanical Planarization) is an abrasive process used for polishing the surface of the wafer flat. It can be performed on both oxides and metals. It involves the use of chemical slurries and a circular (sanding) action to polish the surface of the wafer smooth.

The smooth surface is necessary to maintain photolithographic depth of focus for subsequent steps and also to ensure that aluminum interconnects are not deformed over contour steps.

A simple analogy here is that of an orbital sander used in woodworking. Imagine such a sander used with a wet chemical paste (slurry).

The smoothed surfaces are now ready to have more process steps, adding more layers....

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